Tuesday, October 09, 2012

InP Epitaxial Wafers beyond 2.0µm

Marktech Optoelectronics is now offering Indium Phosphide Epitaxial wafers up to 4 inches with wavelengths of 1.7µm 2.2µm and 2.6µm, ideally suited for high speed imaging, high speed HBT and HEMTs, APDs and analog-digital converter circuits. Applications using InP-based components can greatly exceed transmission rates in comparison to similar components structured on GaAs or SiGe based platforms.

Utilizing sophisticated MBE and MOCVD manufacturing processes in Epitaxial InP thin film growth, Marktech is now producing high reliability wafers on 2", 3" and 4" substrates. Demands continues to increase for higher transmission rate and longer wavelength components capable of exceeding today's commercially available products with speeds ranging up to 10Gbit/s. It is acknowledged that GaAs and SiGe based components have limitations in terms of speed. Devices based on an InP platform are capable of exceeding these transmission rate limitations, including the operating margin.

Due to the rapid increases in demand put on electronic communication equipment, it is vital to build communication systems that enable high speed and high volume signal processing. In order to process vast amounts of signals, wired communications such as fiber optics need to make continued advancements in time division multiplexing (TDM) and wavelength division multiplexing (WDM) capabilities. In wired fiber optic communications, TDM rather than WDM electronic circuits make it possible to ease system building allowing for downsizing of the communication system, and therefore the costs associated. The development of ultra high speed electronic devices is the key to possibilities for the future of these changes.

Applications include high resolution imaging arrays, high capacity wireless communications, high data rate optical fiber systems, thin film solar panels and sub millimeter-wave spectroscopy.

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